Technische Dokumente
Technische Dokumente: Schwerpunkt auf Bonden!
Quantum Computing
Schwerpunkt auf BondenLaden Sie
Published by University of California and Google - 2017, November 30th
Qubit compatible superconducting interconnects
Toward a flip-chip bonder dedicated to direct bonding for production environment
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IWLPC October 24, 2017 SET, Saint-Jeoire, France
3D vertical integration of components is now an industrial reality. Considerations and results on direct bonding for HVM precise assembly are presented.
Results of the 2015 testbeam of 180 nm AMS High-Voltage CMOS sensor prototype
June 30, 2016Schwerpunkt auf BondenDPNC, University of Geneva, SwitzerlandLaden Sie
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC.
Evaluation of Sn-based Microbumping Technology for Hybrid IR Detectors, 10µm Pitch to 5µm Pitch
ECTC 2015Schwerpunkt auf BondenIMEC Leuven, Belgium SOFRADIR Veurey-Voroize, FranceLaden Sie
Hybridization of Infrared detectors has relied on Indium balling for the last decades. Whereas this well-established process has proven its reliability through out the years, it becomes challenging to further decrease the balling pitch below 10µm, due to balling volume limitation.
Development done on Device Bonder to address 3D requirements in a Production Environment
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IWLPC 2014 focus on bonding SET, Saint-Jeoire, France
Key to the success of 3D integration will be the ability to accurately align and bond devices with aggressive feature sizes
Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors
7-12 September, 2014Schwerpunkt auf BondenUNIVERSITY OF SURREY, Guilford, Surrey, U.K.10th International Conference on Position Sensitive DetectorsLaden Sie
In the last decade, the Detector Development at the Technology departmentof the Science and Technology Facilities Council (STFC), U.K., established a variety of fabrication and bonding techniques to build pixelated X-ray and y-ray detector systems such as the spectroscopic X-ray imaging detector HEXITEC.
Microbumping Technology for Hybrid IR detectors, 10µm pitch and beyond
EPTC 2014Schwerpunkt auf BondenIMEC Leuven, Belgium SOFRADIR Veurey-Voroize, FranceSingaporeLaden Sie
In order to assess the feasability of a more mass-manufacturable process, IMEC has developed microbump technologies down to 10 µm pitch. The microbumps are based on Cu/Ni/Sn semi additive plating and built at wafer level using a process fully compatible with standard packaging infrastructures.
Development done on Device Bonder to address 3D requirements in a production environment
IWLPC 2014Schwerpunkt auf BondenSET Saint-Jeoire, FranceSan Jose, CALaden Sie
This paper will explore the above challenges in 3D HVMand will present solutions and trade-offs using a systemslevel approach
Die Attach Bonding using High-frequency Ultrasonic Energy for High-temperature application
June 2014Schwerpunkt auf BondenIME - Journal of Electronics materials (abstract)Laden Sie
Room-temperature die-attach bonding using ultrasonic energy was evaluatedon Cu/In and Cu/Sn-3Ag metal stacks.
Wafer-level 3D integration with 5 micron interconnect pitch for infrared imaging applications
June 2014Schwerpunkt auf BondenRTI InternationalLaden Sie
The use of 3D integration technology in focal plane array imaging devices has been shown to increase imagingcapability while simultaneously decreasing device area and power consumption, as compared to analogous 2D designs.
High Density Interconnect Bonding of Heterogeneous Materials Using Non-Collapsible Microbumps at 10 μm Pitch
June 2014Schwerpunkt auf BondenRTI InternationalLaden Sie
This paper reports on a successful demonstration of the use and reliability of CU/SN interconnection of heterogeneous semiconductor die.
Chip to wafer copper direct bonding electrical characterization and thermal cycling
December 2013Schwerpunkt auf BondenCEA – LETI, MINATEC CampusLaden Sie
Study of the recent achievements in cooper direct bonding technology with oxide/cooper mixed surface.
Micro-tube insertion into aluminum pads: Simulation and experimental validations
IMAPS 2013Schwerpunkt auf BondenCEA – LETI, MINATEC CampusLaden Sie
Ultra-fine pitch flip-chip
9th International Conference and Exhibition on Device Packaging
This material is posted here with permission of IMAPS.
Aluminum to aluminum Bonding at Room Temperature
ECTC 2013Schwerpunkt auf BondenCEA – LETI, MINATEC CampusLaden Sie
High density and very lowpitches face to face aluminum/aluminum cold bonding is feasable when using aluminum coated micro-tubes inserted into aluminum pads.
Chip to wafer direct bonding technologies for high density 3D integration
ECTC 2012Schwerpunkt auf BondenCEA – LETI, MINATEC, STMicroelectronics, SETLaden Sie
Demonstration of chip to wafer assembly based on aligned Cu-Cu direct bonding.
A 10 μm Pitch Interconnection Technology using Micro Tube Insertion into Al-Cu for 3D Applications
ECTC 2011Schwerpunkt auf BondenCEA – LETI, MINATEC, LEM3 –CNRS/UPV-MLaden Sie
Future 3-D applications require a very low pitch for interstrata vertical interconnection. The last ITRS assessment for vertical interconnection predicts a need for...
This material is posted here with permission of IEEE.
Low-Profile 3D Silicon-on-Silicon Multi-chip Assembly
ECTC 2011Schwerpunkt auf BondenIBM T.J. Watson Research CenterLaden Sie
The focus of this paper is multi-chip 3D silicon-on-silicon assembly using low-profile lead-free (Sn-Cu) solder interconnects.
This material is posted here with permission of IEEE.
Low Temperature Bonding of High Density Large Area Array Interconnects for 3D Integration
IMAPS 2010Schwerpunkt auf BondenRTI InternationalLaden Sie
The results of bonding and stress testing of Cu/Sn-Cu bonded dice and Cu-Cu thermo-compression bonded dice....
This material is posted here with permission of Imaps.
Embedded active device packaging technology for real DDR2 memory chips
IWLPC 2010Schwerpunkt auf BondenIndustrial Technology Research Institute (ITRI)Laden Sie
As high-speed, high-density, and high-performance are the primary IC development targets, packaging becomes key technology...
Originally published in the IWLPC Proceedings
Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors
SPIE Defense, Sensing & Security 2010Schwerpunkt auf BondenHRL LaboratoriesLaden Sie
InAs/GaSb-based type II superlattices (T2SL) offer a manufacturable FPA technology with FPA size, scalability and cost advantages over HgCdTe.
Copyright 2010 SPIE
Ultrathin 3D ACA FlipChip-In-Flex Technology
ECTC 2010Schwerpunkt auf BondenBerlin Technical University, NB Technologies and Fraunhofer IZMLaden Sie
Die thickness of common, high-volume chip stacks range between 50-100 µm while thinning industry aims towards ultrathin...
This material is posted here with permission of IEEE.
Three Chips Stacking with Low Volume Solder Using Single Re-Flow Process
ECTC 2010Schwerpunkt auf BondenInstitute of Microelectronics - A*STARLaden Sie
A novel low temperature Cu-Cu bonding approach called the insertion bonding technique has been developed.
This material is posted here with permission of IEEE.
Insertion Bonding: A Novel Cu-Cu Bonding Approach for 3D Integration
ECTC 2010Schwerpunkt auf BondenIMEC and the Katholieke Universiteit LeuvenLaden Sie
A novel low temperature Cu-Cu bonding approach called the insertion bonding technique has been developed.
This material is posted here with permission of IEEE.
SET Technical Bulletin N°3
February 2010Schwerpunkt auf BondenCEA-Leti, IMEC, ITRI, IME-A*Star, RTI, etc...Laden Sie
It is a compilation of articles written by our clients. Each article provides unique insights into the exciting area of C2W and C2C bonding.
RF MEMS and flip-chip for space flight demonstrator
June 2009Schwerpunkt auf BondenThales Alenia SpaceLaden Sie
The next generation of telecommunication satellites payloads will require higher performances and higher..
Electrical characterization of high count, 10 µm pitch, room-temperature vertical interconnections
Device Packaging 2009Schwerpunkt auf BondenCEA-LETILaden Sie
In order to increase the format of heterogeneous staring arrays to 2Kx2K pixels or even larger complexities, limited substrate size and cost...
This material is posted here with permission of Imaps.
New Reflow Soldering and Tip in Buried Box (TB2) Techniques For Ultrafine Pitch Megapixels Imaging Array
ECTC 2008Schwerpunkt auf BondenCEA-LETILaden Sie
Flip chip is a high-density and highly reliable interconnection technology which is mandatory for the fabrication of high end imaging arrays.
This material is posted here with permission of IEEE.
Technische Dokumente: Schwerpunkt auf Nano-Prägung!
NaPANIL "Library of Processes"
March 2012Schwerpunkt auf Nano-PrägungNaPANILLaden Sie
Nanopatterning, Production and Applications based on Nanoimprint Lithography.
Second edition with results of the NaPANIL-project
UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
November 2008Schwerpunkt auf Nano-PrägungIISBLaden Sie
Imprint specific process parameters like the residual layer thickness and the etch resistance of the UV polymers for the substrate etch process have to be optimized to introduce UV nanoimprint lithography (UV NIL) as a high-resolution, low-cost patterning technique... => Please click on Begin Search, type "schmitt" as person and "nanoimprint" as keyword.=> Then you will access to all latest papers!
UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
September 2008Schwerpunkt auf Nano-PrägungIISBLaden Sie
It's a poster
UV nanoimprinting lithography using nanostructured quartz molds with antisticking functionalization
February 2008Schwerpunkt auf Nano-PrägungCNR-IMMLaden Sie
In this paper, we report the results obtained by the application of the SET FC150 equipment for UV-NIL...
Konferenzberichte
Opto-electronics flip-chip bonding automation and in-situ quality monitoring
KonferenzberichteLaden Sie
Aurélien Griffart from SET at EMPC - Pisa, Italy, September 16-19, 2019
Flip-chip bonding: how to meet the high accuracy requirements ?
KonferenzberichteLaden Sie
Abstract
Flip-chip bonding: how to meet the high accuracy requirements ?
Caroline Avrillier from SET at EMPC - Warsaw, Poland, September 10-13, 2017
Flip-chip assembly for focal plane array
KonferenzberichteLaden Sie
Abstract
Considerations, constraints and processes for reliable assembly of FPA are presented
Pascal Metzger from SET at IST :GST - Mumbai, India, November 25-26, 2017
Toward a flip-chip bonder dedicated to direct bonding for production environment
KonferenzberichteLaden Sie
Abstract
3D vertical integration of components is now an industrial reality. Considerations and results on direct bonding for HVM precise assembly are presented.
Pascal Metzger from SET at IWLPC - San Jose, CA, USA, October 24-25, 2017
High Accuracy Flip-Chip Equipement
KonferenzberichteLaden Sie
Abstract
Consideration on the design of high precision Flip-chip bonder for mass production.
Nicolas Raynaud from SET at European 3D Summit - Grenoble, France, 18-20 January 2016
Development done on Device Bonder to Address 3D Requirements in a Production Environment
KonferenzberichteLaden Sie
Abstract
Key to the success of 3D integration will be the ability to accurately align and bond devices with aggressive feature sizes
Pascal Metzger from SET at IWLPC, San Jose, November 11-13, 2014
Flip-Chip Assembly FPA
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Abstract
Flip-Chip Assembly for Focal Plane Array
Jean-Stéphane Mottet from SET at ORION - Moscow XXII International Conference Photoelectronics and Night Vision Devices, May 28th, 2014
Die-to-Die and Die-to-Wafer Bonding solution for High Density, Fine Pitch Micro-Bumped Die
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Abstract
Higher density interconnection using 3-Dimensional technology implies a pitch reduction and the use of micro-bumps. The micro-bump size reduction has a direct impact on the placement accuracy needed on the die placement and flip chip bonding equipment. The paper presents a die-to-die and die-to-wafer, high accuracy, die bonding solution illustrated by the flip chip assembly of a large 2x2cm die consisting of 1 million 10µm micro-bumps at 20µm pitch.
Gilbert Lecarpentier from SET at Imaps Device Packaging 2012
Process and Equipment Enhancements for C2W bonding in a 3D Integration Scheme
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Abstract
This paper will review three major areas of process or equipment development surrounding the above problems, namely the issue of throughput enhancement by using a sacrificial adhesive to temporarily tack the dice before collective bonding, the issue of prior or in-situ removal and prevention of surface oxides at the bonding interface, and the issue of local environmental control to reduce particulates and other airborne contaminants. Each of these 3 will be explored with hardware solutions proposed, along with process results on test vehicles or functional devices.
Keith Cooper from SET North America at IWLPC 2011
Chip-to-Wafer Technologies for High Density 3D Integration
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Abstract
CEA-Leti partnering with SET, STMicroelectronics, ALES and CNRS-CEMES on advanced Chip-to-Wafer technologies for 3D Integration in the frame of the PROCEED project, a 4.2 Million Euros, 24 months project supported by French FIU (Fond Interministeriel Unique). Started in 2009, the goal of the PROCEED project is to demonstrate high alignment accuracy (<1µm) of chip-to-wafer structures made by direct metallic bonding.
Penned by CEA Leti, Minatec campus, CNRS Cemes, ALES, SET, ST Microelectronics and presented at MinaPad 2011
3D-IC Integration using D2C or D2W Alignment Schemes together with Local Oxide Reduction
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Abstract
3-Dimensional interconnection of high density integrated circuits enables building devices with greater functionality with higher performances in a smaller space. This paper explores the chip-to-chip and chip-to-wafer alignment and the associated bonding techniques such as in-situ reflow or thermocompression with a local oxide reduction which contributes to higher yield together with reduction of the force or temperature requirements.
Gilbert Lecarpentier from SET at Imaps Device Packaging 2011
Flip-chip die bonding: an enabling technology for 3D integration
Konferenzberichte
Abstract
3-Dimensional Integration of Integrated Circuits is a method to build greater functionality into ever-smaller spaces for electronic circuitry, wherein dice of varying sizes, materials, or even application types are electrically and mechanically bonded together.
Keith Cooper from SET North America at IWLPC 2010
Die-to-wafer bonding of thin dies using a 2-step approach: high accuracy placement, then gang bonding
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Abstract
25 um thick dies, mounted on thick carrier die, were placed on a 300mm landing wafer using the High Accuracy Die Bonder SET-FC300. The bonding process was either Cu/Cu or Cu/Sn with respective pitch of 108 µm and 408 µm...
Gilbert Lecarpentier from SET at Imaps Device Packaging 2010
NIL Verfahrenstechnik
NPS300 Nano imPrinting Stepper
NIL Verfahrenstechnik
Produktionslösungen von Nanostrukturen mit geringen Kosten sind in Entwicklung, die die Antriebskräfte der Halbleiter-, MOEMS- und Optoelektronik-Technologie von morgen sein können. Insbesondere wurden Nano-Imprint-Lithographie (NIL) und ihre Variationen als eine kostengünstige Alternative zur hochauflösenden Elektronenstrahl-Lithographie entwickelt, um unterhalb 20 nm Größen zu drucken.
Prägung basiert sich auf dem Prinzip des mechanischen Pressens von dünner Polymerfolie mit einem Prägestempel mit dem Nanomuster in einem thermo-mechanischen oder UV-Härtung Prozess. Das gemusterte Polymer kann als ein Endgerät, z.B. Linse für Bildsensoren, Mikro-Chip für Strömungstechnik, biomedizinisches Array, usw. handeln. Es kann auch als hochauflösende Maske für Folgeschritte des Prozesses verwendet werden.
Prägung ist eine direkte Technologie der Lithographie. Es gibt drei grundlegenden Prozess-Schritten:
- Den Prägungsstempel mit dem Substrat ausrichten, das vorbeschichtet mit Prägungsmaterial wurde
- Den Prägungsstempel in das Prägungsmaterial drücken, um das Muster zu übertragen, das auf der Oberfläche der Prägungsstempels geschrieben ist
- Den Prägungsstempel vom Prägungsmaterial trennen
Wir können drei Aufdrucken- oder Prägetechniken beschreiben: Heißprägung-Lithographie (HEL) mithilfe thermisches Plastikmaterials, UV-NIL mithilfe eines flüssigen Abdeckmittels, das dann mit UV-Licht nach dem Formen ausgehärtet wird, und Weiche Lithographie, die die Tinte, die zuvor auf einem weichen Stempel eingetragen ist, auf einem Substrat mithilfe eines Stanz-Verfahrens angewendet wird.
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