Imaps Device Packaging 2010: Conference Proceeding
Title: Die-to-Wafer bonding of thin dies using a 2-Step approach; High Accuracy Placement, then Gang Bonding.Author: G. Lecarpentier from SET-S.A.S.
Additional authors: P. Soussan, R. Agarwal, W. Zhang, P. Limaye, R. Labie, A. Phommahaxay from IMEC.
Abstract:
High Accuracy Die-to-Wafer Collective Hybrid Bonding of thin die stacks 25 um thick dies, mounted on thick carrier die, were placed on a 300 mm landing wafer using the High Accuracy Die Bonder SET-FC300.
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The bonding process was either Cu/Cu or Cu/Sn with respective pitch of 10 µm and 40 µm. A special test structure was designed on the landing die to electrically determine the alignment accuracy after bonding - both with respect to the X-Y alignment and the rotation.
Stacks were then assembled by collective hybrid bonding process. The top die is aligned and placed on the landing wafer coverer by a patterned polymer acting as a temporary alignment holder, and then the populated wafer is moved to a wafer bonder where all the dies are collectively bonded. Electrical measurements on the alignment structures indicate that maximum misalignment of the TSV to the landing pad is in the range of 1.5-1.75 µm and the maximum rotation of the die is 0.03 degrees.
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 Download the presentation* 
* This material, presented at the IMAPS International Conference on Device Packaging (March 8-11, 2010), is posted here with permission of IMAPS.
FC300
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